triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 6, 2002 1 26 - 35 ghz medium power amplifier TGA1073A-SCC key features and performance ? 19 db nominal gain ? 25 dbm nominal pout @ p1db ? -34.5 dbc imr3 @ 15.5 dbm scl ? bias 5 - 7 v @ 220 ma ? 0.25-m mmw phemt 2mi technology ? chip dimensions 1.9 mm x 1.1 mm x 0.1 mm primary applications ? point-to-point radio ? point-to-multipoint communications ? lmds cpe pa 0 5 10 15 20 25 30 26 27 28 29 30 31 32 33 34 35 36 frequency (ghz) p1db (dbm) the triquint TGA1073A-SCC is a three stage mpa mmic design using triquints proven 0.25-m mmw phemt 2mi process. the tga1073a is designed to support a variety of millimeter wave applications including point-to-point digital radio and lmds/lmcs. the three stage design consists of a 200 m input device driving a 480 m interstage device followed by an 800 m output device. the tga1073a provides 25 dbm nominal output power at 1db compression across 26-35 ghz. typical small signal gain is 19 db. the tga1073a requires minimum off-chip components. each device is 100% dc and rf tested on-wafer to ensure performance compliance. the device is available in chip form. -30 -20 -10 0 10 20 30 26 27 28 29 30 31 32 33 34 35 36 frequency (ghz) gain and return loss (db) s21 s11 s22
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 6, 2002 2 TGA1073A-SCC table 1 maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8 v 6/ i + positive supply current 296 ma 2/, 6/ i - negative supply current 8.8 ma p in input continuous wave power 23 dbm 6/ p d power dissipation 2.66 w 5/, 6/ t ch operating channel temperature 150 0 c3/, 4/ t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for the device. 2/ total current for all stages. 3/ these ratings apply to each individual fet. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ when operated at this bias condition with a base plate temperature of 55 0 c, the median life is reduced from 1.3e+6 to 4.7e+2 hours. 6/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . table ii dc specifications (t a = 25 c , nominal) notes symbol limits units min max i max3 300 516 ma i dss3 80 376 ma g m3 176 424 ms 1/ |v p1 |0.5 1.5 v 1/ |v p2 |0.5 1.5 v 1/ |v p3 |0.5 1.5 v 1/ |v bvgd1 |11 30 v 1/ |v bvgs1 |11 30 v 1/ v p , v bvgd , and v bvgs are negative.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 6, 2002 3 table iv reliability data bias conditions p diss r q jc t ch t m parameter v d (v) i d (ma) (w) (c/w) ( c) (hrs) r q jc thermal resistance (channel to backside of c/p) 6 220 1.32 69.4 146.6 1.3e+6 note: assumes eutectic attach using 1.5 mil thick 80/20 ausn mounted to a 20 mil cumo carrier at 55 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. table iii rf specifications (t a = 25 c, nominal) note test measurement conditions value units 6v @ 220ma min typ max 1/ small-signal gain magnitude 26 - 34 ghz 35 ghz 17 19 19 db db power output at 1 db gain compression 27 ghz >27-33 ghz 35 ghz 22 23 24.5 24.5 23 dbm dbm dbm 26 C 35 ghz -15 db 1/ input return loss magnitude 28 C 32 ghz -10 db 26 C 35 ghz -15 db 1/ output return loss magnitude 28 C 32 ghz -10 db 2/ output third order intercept 32 dbm 1/ rf probe data is taken at 1 ghz steps from 26-35 ghz. 2/ minimum output third-order-intercept (otoi) is generally 6db minimum above the 1db compression point (p1db). calculations are based on standard two-tone testing with each tone approximately 10db below the nominal p1db. factors that may affect otoi performance include device bias, measurement frequency, operating temperature, output interface, and output power level for each tone. TGA1073A-SCC
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 6, 2002 4 tga1073a typical rf-on-wafer probe vd=6 v, id=220 ma, 25 c, nominal 0 5 10 15 20 25 30 26 27 28 29 30 31 32 33 34 35 36 frequency (ghz) p1db (dbm) -30 -25 -20 -15 -10 -5 0 26 27 28 29 30 31 32 33 34 35 36 frequency (ghz) o utput r eturn l oss (db ) -30 -25 -20 -15 -10 -5 0 26 27 28 29 30 31 32 33 34 35 36 frequency (ghz) input r eturn l oss (db ) 0 5 10 15 20 25 26 27 28 29 30 31 32 33 34 35 36 frequency (ghz) gain ( db ) TGA1073A-SCC
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 6, 2002 5 mechanical characteristics TGA1073A-SCC gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 6, 2002 6 TGA1073A-SCC gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. chip assembly and bonding diagram
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com product data sheet november 6, 2002 7 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly process notes TGA1073A-SCC reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 seconds maximum. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c.
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